Rao Feng and associate researcher at the Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, and colleagues have developed a new phase change material, niobium alloy, that can achieve both polycrystalline and glassy phases in less than 1 nanosecond. Conversion between states. The research results published in the "Science" magazine published this week broke the limit of storage speed of phase change memory (PCRAM) and laid the foundation for the realization of China's autonomous general-purpose memory technology. After decades of development, computers have become smaller, faster, and cheaper, and the challenges that continue to increase storage performance have become more severe. Static/dynamic random access memory (SRAM buffer/DRAM memory) is a temporary storage medium that directly exchanges data with the computer's central processor and can be freely retrieved or stored as needed. At the beginning of this century, scientists have already proposed that PCRAM is a promising new type of non-volatile memory. By switching between two phases, it represents "0" and "1" for storage. The most commonly used phase change material is gadolinium alloy (GST). In order to meet the high-speed random storage requirements of today's computers, the phase transition must be completed within 10 nanoseconds, and the phase change rate of niobium alloys It usually takes tens to hundreds of nanoseconds, which is too slow to match or replace traditional DRAM and SRAM memory. Rao Feng and colleagues calculated the transition metal from the niobium alloy by theoretical calculations to screen out niobium alloys that can accelerate the formation of nuclei at higher temperatures by forming more stable niobium bonds. They also synthesized this new type of phase change material and demonstrated through experiments that the new material can rapidly complete the reversible transformation of crystal and glass phase transitions in 700 picoseconds (0.7 nanoseconds). Researchers said that this speed increase will make phase-change memory promising to replace the existing high-speed memory for practical use. It will further boost the overall performance of computers, and will lead to faster, lower power consumption and longer life. Flum Float,Flum Float 3000 Puffs,Flum Float Vape,Flum Float Disposable Shenzhen Zpal Technology Co.,Ltd , https://www.zpal-vape.com